UVA LED

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Description

SBT-10X-UV Surface Mount LED

Features
• High power UV LED with peak wavelengths 365 – 425 nm
• Latest UVX technology enables ultra-high power density-operation up to 4 A
• Up to 2 W output to maximize performance of curing systems
• Industry standard 3 5 mm x 3 5 mm package
• 120° viewing angle
• Environmentally friendly: REACH, RoHS and Halogen compliant

Applications

• Curing- inks, coating and adhesives
• 3D Printing
• Maskless Lithography
• Diagnostics
• Fluorescence Imaging

 

Ordering Part Numbers

Wavelength Range (nm) Radiometric Flux Wavelength Bins Ordering Part Number1,2
Bin Kit Code Min. Flux (W)
365-375 AH 1 .3 365, 370 SBT-10X-UV-A120-AH365-22
380-390 AH 1 .3 380, 385 SBT-10X-UV-A120-AH380-22
390-400 AH 1 .3 390, 395 SBT-10X-UV-A120-AH390-22
400-410 AH 1 .3 400, 405 SBT-10X-UV-A120-AH400-22
415-425 AH 1 .3 415, 420 SBT-10X-UV-A120-AH415-22

 

Binning Structure

SBT-10X-UV LEDs are specified for radiometric flux and peak wavelength at a drive current of 1.0 A with a 20 ms pulse at 25°C and placed into one of the following Flux, Wavelength and Forward Voltage bins.

Radiometric Flux Bins

Color Radiometric Flux Bin (FF) Minimum Flux (W) Maximum Flux (W)
UV AH 1.30 1.40
AJ 1.40 1.50
AK 1.50 1.75
AL 1.75 2.00

 

Peak Wavelength Bins

Color Wavelength Bin (WWW) Minimum Wavelength (nm) Maximum Wavelength (nm)
UV 365 365 370
370 370 375
380 380 385
385 385 390
390 405 410
395 395 400
400 400 405
405 405 410
415 415 420
420 420 425

 

Binning Structure

Forward Voltage Bins

Color Forward Voltage Bin Minimum Voltage (V) Maximum Voltage (V)
UV V0 3.0 3.1
V1 3.1 3.2
V2 3.2 3.3
V3 3.3 3.4
V4 3.4 3.5
V5 3.5 3.6
V6 3.6 3.7
V7 3.7 3.8
V8 3.8 3.9
V9 3.9 4.0
V10 4.0 4.1
V11 4.1 4.2

 

Typical Device Performance (Tc = 25°C)

Characteristics at Recommended Test Drive Current Symbol 365 nm 385 nm 395 nm 405 nm 420 nm Unit
Peak Wavelength Range typ λ 365-375 380-390 390-400 400-410 415-425 nm
Test Current 1 typ I 1.0 1.0 1.0 1.0 1.0 A
Peak Wavelength Typ. typ λp 367 385 395 405 420 nm
Forward Voltage min VF min 3.0 3.0 3.0 3.0 3.0 V
typ VF 3.7 3.4 3.6 3.7 3.7 V
max VF max 4.2 4.1 4.1 4.2 4.2 V
Radiometric Flux 2 typ Φtyp 1.6 1.6 1.5 1.4 1.4 W
FWHM at 50% of Φ typ Δλ1/2 15 15 15 17 17 nm
Device Thermal Characteristics at 3 .0 A 3
Electrical thermal resistance (junction to case) typ Rθj-c (elec.) 1.8 °C/W
Real thermal resistance

(junction to case) WPE = 31.7%

typ Rθj-c (real) 2.6 °C/W

 

Absolute Maximum Ratings

Symbol Values Unit
Absolute Minimum Current (CW or Pulsed) 1 Imin 0.2 A
Absolute Maximum Current for 365 nm (CW) 2 Imax 2.5 A
Absolute Maximum Current for 385/395/405/420 nm (CW) 2 Imax 4.0 A
Absolute Maximum Surge Current for 365 nm 2 (Frequency > 240 Hz, duty cycle =10%, t=1ms) Is 3.75 A
Absolute Maximum Surge Current for 385/395/405/

420 nm 2

(Frequency > 240 Hz, duty cycle =10%, t=1ms)

Is 6.0 A
Maximum Junction Temperature 2 Tjmax 125 °C
Storage Temperature Range Ts -40 to +100 °C
ESD Sensitivity (HBM) Vb 8 kV

 

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