Description
SST-10-DR Deep Red LED
Features
• High Power Deep Red LED with Peak Wavelength of 660nm
• Wall-Plug Efficiency: typ. 52% @350mA
• 90 or 130° viewing angle at 50% Iv
• Low Thermal Resistance
• Built-in ESD Protection
• RoHS and REACh compliant
Applications
• Horticulture / Growlights
• Life Sciences
• Medical
SST-10 Binning Structure
SST-10 Deep Red LEDs are tested for luminous flux and chromaticity at a drive current of 350mA – 20ms single pulse and placed into one of the following luminous flux (FF) and chromaticity (WW) bins:
Flux Bins – Test condition=350mA, 250C, 20ms pulse
| Flux Bin (FF) | Minimum Flux (mW) | Maximum Flux (mW) |
| J | 350 | 390 |
| K | 390 | 430 |
| L | 430 | 470 |
| M | 470 | 510 |
Wavelength Bins – Test condition=350mA, 250C, 20ms pulse
| Chromaticity Bin (WW) | Minimum Wavelength (nm) | Maximum Wavelength (nm) |
| D1 | 640 | 645 |
| D2 | 645 | 650 |
| D3 | 650 | 655 |
| D4 | 655 | 660 |
| D5 | 660 | 665 |
| D6 | 665 | 670 |
Ordering Information
| Products | Ordering Part Number | Description |
| SST-10-DR-B90 | SST-10-DR-B90-xx123 | High Power 1-mm2 Deep Red LED in a 3535 surface mount package and a 90-degree lens |
| SST-10-DR-B130 | SST-10-DR-B130-xx123 | High Power 1-mm2 Deep Red LED in a 3535 surface mount package and a 130-degree lens |
SST-10 Deep Red Bin Kit Order Codes
| Color | Luminous Flux | Chromaticity Bins | Kit Number | |
| Bin Kit Flux
Code |
Min. Flux | |||
| Deep Red | J | 350 | D1,D2,D3,D4,D5,D6 | J660 |
| K | 390 | D1,D2,D3,D4,D5,D6 | K660 | |
Optical and Electrical Characteristics at 350mA
| Parameter | Symbol | Minimum | Typical | Maximum | Unit |
| Forward Current2 | If | 350 | 1,500 | mA | |
| Output Power | Φ
r |
410 | mW | ||
| Forward Voltage | Vf | 1.8 | 2.10 | 2.6 | V |
| Photosynthetic Photon Flux (PPF) | PPF400-700nm | 2.24 | μmol/s | ||
| PPF Efficiency (PPE) | PPE400-700nm | 3.05 | μmol/J | ||
| Wall-Plug Efficiency | WPE | 56 | % | ||
| Viewing Angle | 2 Ø1/2 | 90 or 130 | degrees | ||
| Peak Wavelength | λP | 640 | 660 | 670 | nm |
| FWHM | Δλ1/2 | 20 | 22 | 24 | nm |
| Thermal Resistance (Electrical) | RTH | 5.3 | °C/W |
Absolute Maximum Ratings2
| Parameter | Symbol | Rating | Unit |
| Forward Current3,4 | I | 1.5 | A |
| Power Dissipation | PD | 4.0 | W |
| Reverse Voltage | Vr | 5 | V |
| Storage Temperature | TsTg | -40~100 | °C |
| Junction Temperature | TJ | 115 ºC | °C |
| Soldering Temperature | TsLD | JEDEC 020, 260 ºC | |
| ESD Sensitivity (HBM) | Vb | 6000 | V |
