Description
SST-10-IRD-810nm
Dual Junction Surface Mount Series
Low Thermal Resistance Infrared LED
Features
• High Power Infrared LED with typical 810 nm centroid wavelength
• High thermal conductivity substrate
• 90 and 130-degree viewing angle
• Operation at up to 1.5 A CW and 5 A pulse
• Corrosion Robustness Class: 3B
• Built-in ESD protection
• Low Thermal Resistance
• Suitable for all SMT Assembly Methods
Applications
• Surveillance Systems / CCTV
• Iris and Face Recognition
• License Plate Scanning
• Automotive Sensing
• Machine Vision
• Night Vision
Ordering Part Numbers
| Peak Wavelength | Radiometric Flux | Viewing Angle | Ordering Part Number | |
| Minimum
Flux Bin |
Minimum
Flux |
|||
| 810 nm | S | 475 mW | 90 | SST-10-IRD-B90H-S810 |
| 130 | SST-10-IRD-B130H-S810 | |||
Radiometric Flux Bins1
| Flux Bin | Binning @ 350 mA, Tc=25°C2 | |
| Minimum Flux (mW) | Maximum Flux (mW) | |
| S | 475 | 505 |
| T | 505 | 535 |
| U | 535 | 565 |
| V | 565 | 595 |
| W | 595 | 625 |
| X | 625 | 655 |
| Y | 655 | 685 |
| Z | 685 | 715 |
Forward Voltage Bins2
| Voltage Bin | Binning @ 350 mA, Tc= 25°C | |
| Minimum Voltage (V) | Maximum Voltage (V) | |
| V9 | 2.8 | 3.0 |
| Va | 3.0 | 3.2 |
| Vb | 3.2 | 3.4 |
Peak Wavelength Bins3
| Wavelength Bin | Binning @ 350 mA, Tc= 25°C | |
| Minimum Wavelength (nm) | Maximum Wavelength (nm) | |
| 810 | 800 | 830 |
Characteristics1
| Parameter (If=350 mA, Tc=25°C) | Symbol | Value | Unit | |
| Forward Current | If | 350 | mA | |
| Typical Output Power | φv | 535 | mW | |
| Typical Output Power @ 1.0A, t = 20ms | φv 1.0A | 1470 | mW | |
| Forward Voltage | Minimum | Vf min | 2.8 | V |
| Typical | Vf typ | 3.0 | ||
| Maximum | Vf max | 3.4 | ||
| Viewing Angle | B90H | 2 Ø1/2 | 90 | ° |
| B130H | 130 | |||
| Radiant Intensity @ 1.0A, t = 20ms | B90H | fe typ | 770 | mW/sr |
| B130H | 410 | |||
| Peak Wavelength | λp | 815 | nm | |
| Centroid Wavelength | λc | 810 | ||
| FWHM | ∆λ1/2 | 30 | ||
| Temperature Coefficient of Voltage | ∆Vf/∆T | -3.0 | mV/°C | |
| Temperature Coefficient of Radiometric Power | ∆Φ/∆T | -0.2 | %/°C | |
| Temperature Coefficient of Wavelength | ∆λ/ ∆T | 0.3 | nm/°C | |
| Electrical Thermal Resistance (Junction to Solder Point)2 | Rth JS elec | 2.4 | °C/W | |
