Horticulture LEDS

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Description

SST-20-DR Gen 2 Deep Red LED

Features
• High Power Deep Red LED with Peak Wavelength of 660nm
• Wall-Plug Efficiency: typ. 67% @ 350mA
• 120° viewing angle at 50% Iv
• Low Thermal Resistance
• Built-in ESD Protection
• Corrosion Resistant
• RoHS and REACh compliant

Applications
• Horticulture / Growlights
• Life Sciences
• Medical

 

SST-20 Binning Structure

SST-20 Deep Red LEDs are tested for luminous flux and chromaticity at a drive current of 700mA – 20ms single pulse and placed into one of the following luminous flux (FF) and chromaticity (WW) bins:

 

Flux Bins – Test condition=700mA, 250C, 20ms pulse

Flux Bin (FF) Minimum Flux (mW) Maximum Flux (mW)
X 870 910
Y 910 950
Z 950 990
AA 990 1030
AB 1030 1070

 

Wavelength Bins – Test condition=700mA, 250C, 20ms pulse

Chromaticity Bin (WW) Minimum Wavelength (nm) Maximum Wavelength (nm)
D1 640 645
D2 645 650
D3 650 655
D4 655 660
D5 660 665
D6 665 670

 

Ordering Information

Products Ordering Part Number Description
SST-20-DR-B120H SST-20-DR-B120H-xx123 High Power 2-mm2 Deep Red LED in a 3535 surface mount package with high thermal conductivity and a 120-degree lens

 

SST-20 Deep Red Bin Kit Order Codes

Color Luminous Flux Chromaticity Bins Kit Number
Bin Kit Flux

Code

Min. Flux
Deep Red X 870 D1,D2,D3,D4,D5,D6 SST-20-DR-B120H-X660

 

Optical and Electrical Characteristics at 350mA and 700mA1

Parameter Symbol Minimum Typical Maximum Unit
Forward Current2 If 350 2,000 mA
Output Power at 350mA Φ

r

460 mW
Forward Voltage at 350mA Vf 1.8 1.95 2.6 V
Photosynthetic Photon Flux (PPF) at 350mA PPF400-700nm 2.52 μmol/s
PPF Efficiency (PPE) at 350mA PPE400-700nm 3.69 μmol/J
Wall-Plug Efficiency at 350mA WPE 67 %
Output Power at 700mA Φ

r

920 mW
Forward Voltage at 700mA Vf 2.15 V
Photosynthetic Photon Flux (PPF) at 700mA PPF400-700nm 5.02 μmol/s
PPF Efficiency (PPE) at 700mA PPE400-700nm 3.34 μmol/J
Wall-Plug Efficiency at 700mA WPE 61 %
Viewing Angle 2 Ø1/2 120 degrees
Peak Wavelength λP 640 660 670 nm
FWHM Δλ1/2 20 22 24 nm
Thermal Resistance (Electrical) RTH 1.3 °C/W

 

Absolute Maximum Ratings2

Parameter Symbol Rating Unit
Forward Current3,4 I 2.0 A
Power Dissipation PD 5 W
Reverse Voltage Vr 5 V
Storage Temperature TsTg -40~100 °C
Junction Temperature Tj 115 ºC °C
Soldering Temperature TslD JEDEC 020, 260 ºC
ESD Sensitivity (HBM) VB 6000 V

 

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