UVA LED

Category:

Description

CBM-160X-UV Ultraviolet Chip On Board LED

Features
• Mosaic Array UV LED chipset with surface emitting area of 16 mm2, 4:3 aspect ratio
• Latest UVX technology enables ultra-high power density operation up to 4 A/mm2
• Electrically Isolated, high thermal conductivity copper coreboard package
• Available in wide range of UVA wavelengths: 365 nm – 410 nm
• Low-profile window for efficient coupling into small-etendue systems
• Environmentally friendly: REACH, RoHS and Halogen compliant
• Over 60 Watts of optical power at maximum rated drive conditions

Applications

• 3D printing and Additive Manufacturing
• Machine Vision
• Maskless Lithography
• Curing
• Inks
• Coatings
• Adhesives
• Medical and Scientific Instrumentation

Binning Structure

CBM-160X-UV LEDs are specified for flux and peak wavelength at a drive current of 3 Awith a 20 ms pulse at 25°C and placed into one of the following Power Bins and Wavelength Bins.

Flux Bins

Color Flux Bin (FF) Binning @ 3A, 20ms pulse, Tc= 25°C3
Minimum Flux (W) Maximum Flux (W)
UV Q 17.7 19.5
R 19.5 21.0
S 21.0 22.5
T 22.5 24.0
U 24.0 25.1

 

Peak Wavelength Bins

Color Wavelength Bin (WWW) Binning @ 3A, 20ms pulse, Tc= 25°C3
Minimum Wavelength (nm) Maximum Wavelength (nm)
UV 365 365 370
370 370 375
380 380 385
385 385 390
400 400 405
405 405 410

 

Ordering Information

Product Ordering Part Number Description
CBM-160X-UV CBM-160X-UV-Y32-FWWW-2# CBM-160X-UV Mosaic Array chipset consisting of 12 UV chips, a thermistor, and a connector on a copper-core PCB.

 

Ordering Part Numbers

Wavelength Range Radiometric Flux Wavelength Bins Ordering Part Number1,2
Min. Flux Bin Min. Flux (W)
365-375 Q 17.7 365, 370 CBM-160X-UV-Y32-Q365-22
380-390 Q 17.7 380, 385 CBM-160X-UV-Y32-Q380-22
400-410 Q 17.7 400, 405 CBM-160X-UV-Y32-Q400-22

 

Typical Device Performance (Tc = 25°C)

Parameter Symbol Value Unit
Peak Wavelength Range λ 365-375 380-390 400-410 nm
Test Current for binning3 I 3.0 3.0 3.0 A
Peak Wavelength Typ. λp 365 385 405 nm
Forward Voltage VF min 12.8 12.4 12.8 V
VF 14.8 13.8 14.8 V
VF max 17.0 16.4 16.8 V
Radiometric Flux4 Φtyp 21.6 19.2 18.0 W
FWHM at 50% of Φ Δλ1/2 15 15 15 nm

 

bsolute Maximum Ratings

Parameter Symbol Value Unit
Absolute Minimum Current (CW or Pulsed) Imin 0.6 A
Absolute Maximum Current (CW)5 for 365-375 nm Imax 7.5 A
Absolute Maximum Current (CW)5 for 385-405 nm Imax 12 A
Absolute Maximum Surge Current5 for 365-375 nm Is 11.25 A
Absolute Maximum Surge Current5 for 385-405 nm Is 18 A
Maximum Junction Temperature5 Tjmax 125 °C
Storage Temperature Range Ts -40 to +100 °C
ESD Sensitivity (HBM) Vb 8 kV

 

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