Description
SST-10-IRD-850nm
Dual Junction Surface Mount Series
Low Thermal Resistance Infrared LED
Features
• High Power Infrared LED with typical 840 nm centroid wavelength
• High thermal conductivity substrate
• 50, 90 and 130-degree viewing angle
• Operation at up to 1.5 A CW and 5 A pulse
• Corrosion Robustness Class: 3B
• Built-in ESD protection
• Low Thermal Resistance
• Suitable for all SMT Assembly Methods
Applications
• Surveillance Systems / CCTV
• Iris and Face Recognition
• License Plate Scanning
• Automotive Sensing
• Machine Vision
• Night Vision
Ordering Part Numbers
| Peak Wavelength | Radiometric Flux | Viewing Angle | Ordering Part Number | |
| Minimum
Flux Bin |
Minimum
Flux |
|||
| 850 nm | V | 565 mW | 50 | SST-10-IRD-B50H-V850 |
| V | 565 mW | 90 | SST-10-IRD-B90H-V850 | |
| W | 595 mW | 130 | SST-10-IRD-B130H-W850 | |
Radiometric Flux Bins1
| Flux Bin | Binning @ 350 mA, Tc=25°C2 | |
| Minimum Flux (mW) | Maximum Flux (mW) | |
| V | 565 | 595 |
| W | 595 | 625 |
| X | 625 | 655 |
| Y | 655 | 685 |
| Z | 685 | 715 |
Forward Voltage Bins2
| Voltage Bin | Binning @ 350 mA, Tc= 25°C | |
| Minimum Voltage (V) | Maximum Voltage (V) | |
| V8 | 2.6 | 2.8 |
| V9 | 2.8 | 3.0 |
| Va | 3.0 | 3.2 |
Peak Wavelength Bins3
| Wavelength Bin | Binning @ 350 mA, Tc= 25°C | |
| Minimum Wavelength (nm) | Maximum Wavelength (nm) | |
| 850 | 840 | 870 |
Characteristics1
| Parameter (If=350 mA, Tc=25°C) | Symbol | Value | Unit | |
| Forward Current | If | 350 | mA | |
| Typical Output Power | B50H | φv | 620 | mW |
| B90H | ||||
| B130H | 640 | |||
| Typical Output Power @ 1.0A, t = 20ms | B50H | φv 1.0A | 1740 | |
| B90H | ||||
| B130H | 1800 | |||
| Forward Voltage | Minimum | Vf min | 2.6 | V |
| Typical | Vf typ | 2.9 | ||
| Maximum | Vf max | 3.2 | ||
| Viewing Angle | B50H | 2 Ø1/2 | 50 | ° |
| B90H | 90 | |||
| B130H | 130 | |||
| Radiant Intensity @ 1.0A, t = 20ms | B50H | fe typ | 1237 | mW/sr |
| B90H | 844 | |||
| B130H | 560 | |||
| Peak Wavelength | λp | 850 | nm | |
| Centroid Wavelength | λc | 840 | ||
| FWHM | ∆λ1/2 | 26 | ||
| Temperature Coefficient of Voltage | ∆Vf/∆T | -3.0 | mV/°C | |
| Temperature Coefficient of Radiometric Power | ∆Φ/∆T | -0.2 | %/°C | |
| Temperature Coefficient of Wavelength | ∆λ/ ∆T | 0.3 | nm/°C | |
| Electrical Thermal Resistance (Junction to Solder Point)2 | Rth JS elec | 2.4 | °C/W | |
